STS Reactive Ion Etcher (RIE) dielectric System is designed for isotropic RIE plasma etching of dielectric films. The system is capable deep etching of oxide with high selectivity to resist and silicon and fast etch rates. The RIE plasma etching process is accomplished through the use of a low pressure; 13.56 megahertz radio frequency (RF) induced gaseous discharge. The system is set to handle four different gases (CF4, CHF3, O2, and He) for etching of Silicon Nitride or Silicon Dioxide at various etch rates. The sample is backside cooled during etch processes.