The Low Pressure Chemical Vapor Deposition system (LPCVD, tool #11) is a 4- stack furnace manufactured by CVD Equipment Corp. The furnace tubes feature critically controlled temperatures and gas flows to achieve the correct environment to grow layers of oxide and to deposit chemical layers onto the silicon substrates. These layers form the basis of the structures that are produced in the subsequent lithography and etching processes.

* Tube # 1 is equipped for Wet Oxidation using a Transene Liquid source at temperatures up to 1200 C
* Tube # 2 is equipped for Dry Oxidation and Phosphorus Doping at temperatures up to 1200 C
* Tube # 3 is equipped for Low Pressure Chemical Vapor Deposition of Silicon Nitride at temperatures up to 900 C
* Tube # 4 is equipped for Low Pressure Chemical Vapor Deposition of Polysilicon at temperatures up to 800 C